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FDPF12N50UT

FDPF12N50UT
Mfr. #:
FDPF12N50UT
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
MOSFET 500V 10A N-Chan Ultra FRFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FDPF12N50UT Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-220FP-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
500 V
Идентификатор - үздіксіз төгу тогы:
10 A
Rds On - ағызу көзіне қарсылық:
650 mOhms
Vgs th - Gate-Source шекті кернеуі:
5 V
Vgs - Шлюз көзі кернеуі:
30 V
Qg - қақпа заряды:
21 nC
Pd - қуаттың шығыны:
42 W
Конфигурация:
Бойдақ
Сауда атауы:
UniFET FRFET
Қаптама:
Түтік
Биіктігі:
16.07 mm
Ұзындығы:
10.36 mm
Серия:
FDPF12N50UT
Транзистор түрі:
1 N-Channel
Ені:
4.9 mm
Бренд:
ON Semiconductor / Fairchild
Форвард өткізгіштік - Мин:
11 S
Күз уақыты:
35 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
45 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
60 ns
Қосудың әдеттегі кешігу уақыты:
35 ns
Бірлік салмағы:
0.080072 oz
Tags
FDPF12N5, FDPF12, FDPF1, FDPF, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM, 500V, 10A, 800mΩ, TO-220F
***Yang
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 10A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
***nell
MOSFET, N, TO-220F; Transistor Polarity:N; Max Current Id:5.3A; Max Voltage Vds:500V; On State Resistance:0.73ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:50W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220F; No. of Pins:3; SVHC 2:Cobalt dichloride; Case Style:TO-220F; Cont Current Id:5.3A; Power Dissipation Pd:50W; Pulse Current Idm:21A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:500V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
***emi
N-Channel QFET® MOSFET 500V, 9A, 800mΩ
*** Electronics
N-CHANNEL POWER MOSFET
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F
***ure Electronics
FDPF12N60NZ Series 600 V 12 A 650 mOhm N-Ch PowerTrench® MOSFET - TO-220F
***Yang
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
600V 12A 39W 650m´Î@10V6A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 600V, 0.53OHM, 12A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; MSL:- ;RoHS Compliant: Yes
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***itex
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 35W; -55+150 deg.C; THT; TO220FP
***icroelectronics
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 10A TO220FP
***fin
Transistor NPN MOS STP10NK60/STP10NK60ZFP SGS THOMSON Ampere=10 V=600 TO220
***ure Electronics
N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH™ Power MosFet - TO-220-FP
***enic
600V 10A 35W 750m´Î@10V4.5A 4.5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ark
N CHANNEL MOSFET, 600V, 10A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
*** Electronics
STMICROELECTRONICS STF10N62K3 Power MOSFET, N Channel, 8.4 A, 620 V, 0.68 ohm, 10 V, 3.75 V
***et
Trans MOSFET N-CH 620V 8.4A 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
8.4 A 620 V 0.75 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 620V, 8.4A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
***icroelectronics
N-channel 600 V, 0.53 Ohm, 10 A Zener-protected SuperMESH(TM)2 Power MOSFET in a TO-220FP package
***ical
Trans MOSFET N-CH 600V 10A 3-Pin (3+Tab) TO-220FP Tube
***ure Electronics
N-Channel 650 V 0.64 O SuperMESH™ Power MosFet - TO-220FP
***ponent Stockers USA
10 A 600 V 0.64 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 10A I(D), 600V, 0.64ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 650V, 10A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Package / Case:TO-220FP; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
Бөлім № Mfg. Сипаттама Қор Бағасы
FDPF12N50UT
DISTI # 26962129		ON Semiconductor500V, 10A, 0.8 OHM, N-CHANNEL5000
  • 1000:$0.9750
FDPF12N50UT
DISTI # FDPF12N50UT-ND		ON SemiconductorMOSFET N-CH 500V TO-220F-3
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.2441
FDPF12N50UT
DISTI # FDPF12N50UT		ON SemiconductorTrans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF12N50UT)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0189
  • 2000:$1.0119
  • 4000:$0.9999
  • 6000:$0.9869
  • 10000:$0.9619
FDPF12N50UTFairchild Semiconductor CorporationPower Field-Effect Transistor, 10A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		15000
  • 1000:$1.1500
  • 500:$1.2100
  • 100:$1.2600
  • 25:$1.3100
  • 1:$1.4100
FDPF12N50UT
DISTI # 512-FDPF12N50UT		ON SemiconductorMOSFET 500V 10A N-Chan Ultra FRFET
RoHS: Compliant		955
  • 1:$2.3000
  • 10:$1.9500
  • 100:$1.5600
  • 500:$1.3700
  • 1000:$1.1400
  • 2000:$1.0600
  • 5000:$1.0200
FDPF12N50UT
DISTI # 8648587P		ON SemiconductorMOSFET N-CH 500V 10A UNIFET ULTRA TO220F, TU345
  • 50:£1.2780
  • 100:£1.1680
  • 250:£1.1020
  • 500:£1.0740
FDPF12N50UT
DISTI # 8648587		ON SemiconductorMOSFET N-CH 500V 10A UNIFET ULTRA TO220F, PK105
  • 5:£1.5620
  • 50:£1.2780
  • 100:£1.1680
  • 250:£1.1020
  • 500:£1.0740
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Қол жетімділік
Қор:
898
Тапсырыс бойынша:
2881
Саны енгізіңіз:
FDPF12N50UT ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,51 $
1,51 $
10
1,28 $
12,80 $
100
1,02 $
102,00 $
500
0,90 $
450,00 $
1000
0,74 $
745,00 $
2000
0,69 $
1 388,00 $
5000
0,67 $
3 340,00 $
10000
0,64 $
6 420,00 $
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