We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| FF200R12KE3HOSA1 DISTI # FF200R12KE3HOSA1-ND | Infineon Technologies AG | IGBT MODULE VCES 1200V 200A RoHS: Not compliant Min Qty: 10 Container: Bulk | Temporarily Out of Stock |
|
| FF200R12KE3B2HOSA1 DISTI # FF200R12KE3B2HOSA1-ND | Infineon Technologies AG | MOD IGBT MED PWR 62MM-1 RoHS: Compliant Min Qty: 10 Container: Tray | Temporarily Out of Stock |
|
| FF200R12KE3HOSA1 DISTI # FF200R12KE3HOSA1 | Infineon Technologies AG | MEDIUM POWER 62MM - Trays (Alt: FF200R12KE3HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| FF200R12KE3B2HOSA1 DISTI # FF200R12KE3B2HOSA1 | Infineon Technologies AG | MEDIUM POWER 62MM - Trays (Alt: FF200R12KE3B2HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| FF200R12KE3HOSA1 DISTI # 13AC8638 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 295A,Transistor Polarity:N Channel,DC Collector Current:295A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:1.05kW,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes | 33 |
|
| FF200R12KE3 DISTI # 641-FF200R12KE3 | Infineon Technologies AG | IGBT Modules 1200V 200A DUAL RoHS: Not compliant | 0 |
|
| FF200R12KE3_B2 DISTI # 641-FF200R12KE3_B2 | Infineon Technologies AG | IGBT Modules N-CH 1.2KV 295A | 0 |
|
| FF200R12KE3HOSA1 DISTI # 2726122 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 295A RoHS: Compliant | 36 |
|
| FF200R12KE3HOSA1 DISTI # 2726122 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 295A RoHS: Compliant | 33 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: KST4401MTF OMO.#: OMO-KST4401MTF |
Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
|
Mfr.#: 1SMB5930BT3G OMO.#: OMO-1SMB5930BT3G |
Zener Diodes 16V 3W |
|
Mfr.#: ULN2003AN OMO.#: OMO-ULN2003AN |
Darlington Transistors Darlington |
|
Mfr.#: IRFR9024NTRPBF OMO.#: OMO-IRFR9024NTRPBF |
MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC |
|
Mfr.#: AC1210FR-071KL OMO.#: OMO-AC1210FR-071KL |
Thick Film Resistors - SMD AEC-Q200 |
|
Mfr.#: EYG-S0610ZLAH OMO.#: OMO-EYG-S0610ZLAH |
Thermal Interface Products Soft PGS - IGBT Mod Infineon |
|
Mfr.#: 1SMB5930BT3G |
Zener Diodes 16V 3W |
|
Mfr.#: AC1210FR-071KL OMO.#: OMO-AC1210FR-071KL-YAGEO |
RES SMD 1K OHM 1% 1/2W 1210 |
|
Mfr.#: KST4401MTF |
TRANS NPN 40V 0.6A SOT-23 |
|
Mfr.#: 1178M OMO.#: OMO-1178M-1190 |
WIRE CUTTING SHEAR, 1.6MM, Overall Length:143mm, Cutting Capacity Max:1.6mm, For Use With:Soft Wire, Blade Edge:Flush, Product Range:-, Body Material:Carbon Steel, Depth:6", External Depth |
