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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SIE20034 | STMicroelectronics | RoHS: Compliant | Europe - 564 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SIE876DF-T1-GE3 OMO.#: OMO-SIE876DF-T1-GE3-VISHAY |
IGBT Transistors MOSFET 60V 110A 125W 6.1mohm @ 10V |
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|
Mfr.#: SIE808DF-T1-GE3 OMO.#: OMO-SIE808DF-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 20V 220A 125W 1.6mohm @ 10V |
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|
Mfr.#: SIE810DF-T1-GE3 OMO.#: OMO-SIE810DF-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V |
|
Mfr.#: SIE850DF-T1-GE3 OMO.#: OMO-SIE850DF-T1-GE3-317 |
RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V |
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|
Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V |
|
|
Mfr.#: SIE810DF-T1-E3 OMO.#: OMO-SIE810DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V |
|
Mfr.#: SIE832DF-T1-E3 OMO.#: OMO-SIE832DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 40V 50A 104W |
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Mfr.#: SIE820DF-T1-E3 OMO.#: OMO-SIE820DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 20V 50A 104W 3.5mohm @ 4.5V |
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Mfr.#: SIE22-12 OMO.#: OMO-SIE22-12-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SIE868DFT1GE3 OMO.#: OMO-SIE868DFT1GE3-1190 |
Power Field-Effect Transistor, 35A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |