CWDM305ND TR13

Mfr. #:: CWDM305ND TR13
Өндіруші:: Central Semiconductor
Сипаттама:: MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: CWDM305ND TR13 Деректер тізімі
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Көбірек ақпарат:: CWDM305ND TR13 Көбірек ақпарат

Өнім атрибуты
Төлсипат мәні

Өндіруші:: Орталық жартылай өткізгіш

Өнім санаты:: MOSFET

RoHS:: Y

Технология:: Си

Орнату стилі:: SMD/SMT

Пакет/қорап:: SOIC-8

Арналар саны:: 2 Channel

Транзистордың полярлығы:: N-арна

Vds - ағызу көзінің бұзылу кернеуі:: 30 V

Идентификатор - үздіксіз төгу тогы:: 5.8 A

Rds On - ағызу көзіне қарсылық:: 34 mOhms

Vgs - Шлюз көзі кернеуі:: 20 V

Qg - қақпа заряды:: 6.3 nC

Ең төменгі жұмыс температурасы:: - 55 C

Максималды жұмыс температурасы:: + 150 C

Pd - қуаттың шығыны:: 2 W

Конфигурация:: Қосарлы

Арна режимі:: Жақсарту

Қаптама:: Ролик

Серия:: CWDM

Транзистор түрі:: 2 N-Channel

Бренд:: Орталық жартылай өткізгіш

Форвард өткізгіштік - Мин:: 12 S

Өнім түрі:: MOSFET

Зауыттық буманың саны:: 2500

Ішкі санат:: MOSFETs

Бөлім # Бүркеншік аттар:: CWDM305ND PBFREE TR13

Бірлік салмағы:: 0.019048 oz

Tags: CWDM305N, CWDM305, CWDM3, CWDM, CWD

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CWDM305ND TR13 Сипаттама

***et: N-Channel Enhancement Mode MOSFET Dual 30V 5.8A 8-Pin SOIC T/R

***i-Key: MOSFET 2N-CH 30V 5.8A 8SOIC

***(Formerly Allied Electronics): IRF7313PBF Dual N-channel MOSFET Transistor; 6.5 A; 30 V; 8-Pin SOIC

***eco: Transistor MOSFET N Channel 30 Volt 6.5 .6 Amp 8 Pin SOIC Tape and Reel

***et: Transistor MOSFET Array Dual N-CH 30V 6.5A 8-Pin SOIC Tube

***ure Electronics: Dual N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8

***nell: MOSFET, DUAL, NN, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Di

***(Formerly Allied Electronics): IRF7319PBF Dual N/P-channel MOSFET Transistor; 4.9 A; 6.5 A; 30 V; 8-Pin SOIC

***p One Stop Global: Trans MOSFET N/P-CH Si 30V 6.5A/4.9A 8-Pin SOIC Tube

***ure Electronics: Dual N/P-Channel 30V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8

***ment14 APAC: DUAL N/P CHANNEL MOSFET, 30V, SOIC; TRAN; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A;

***ineon SCT: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***roFlash: Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V;

***ark: Dual N/p Channel Mosfet, 30V, Soic; Channel Type:dual N And Dual P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:6.5A; No. Of Pins:8Pins Rohs Compliant: Yes

***emi: Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V, 7A, 23mΩ

***ure Electronics: N-Channel 30 V 23 mOhm Integrated PowerTrench® Mosfet SOIC-8

***et Europe: Trans MOSFET N-CH 30V 7A 8-Pin SOIC N T/R

***nell: MOSFET, N, FETKY, SMD, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:7A; Resistance, Rds On:0.019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Id Max:30A; Current, If AV:2mA; Power Dissipation:2mW; Voltage, Vds Max:30V; Voltage, Vf Max:0.45V; Voltage, Vgs th Max:2.5V

***rchild Semiconductor: The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

***Yang: Transistor MOSFET Array Dual N-CH 30V 7.5A 8-Pin SOIC T/R

***emi: Dual N-Channel PowerTrench® SyncFET™, 30V, 7.5A, 22mΩ

***ment14 APAC: N CHANNEL MOSFET, 30V, 7.5mA; Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Current Id Max:7.5mA; Operating Temperature Range:-55°C to +150°C; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.

***Yang: Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin SOIC T/R - Tape and Reel

***emi: Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 6A, 28mΩ

***essParts.Net: FAIRCHILD FDS6912A / MOSFET N-CH DUAL 30V 6A 8SOIC

***ment14 APAC: MOSFET, DUAL, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6A; Package / Case:SOIC; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDS6912A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

CWDM305ND TR13 Көбірек ақпарат

CxxDM Surface Mount Enhancement-Mode MOSFETs: Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
CWDM305ND TR13 DISTI # CWDM305NDCT-ND	Central Semiconductor Corp	MOSFET 2N-CH 30V 5.8A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2490In Stock	1000:$0.3626 500:$0.4532 100:$0.6118 10:$0.7930 1:$0.9100
CWDM305ND TR13 DISTI # CWDM305NDDKR-ND	Central Semiconductor Corp	MOSFET 2N-CH 30V 5.8A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2490In Stock	1000:$0.3626 500:$0.4532 100:$0.6118 10:$0.7930 1:$0.9100
CWDM305ND TR13 DISTI # CWDM305NDTR-ND	Central Semiconductor Corp	MOSFET 2N-CH 30V 5.8A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.3190
CWDM305ND TR13 DISTI # CWDM305ND TR13	Central Semiconductor Corp	N-Channel Enhancement Mode MOSFET Dual 30V 5.8A 8-Pin SOIC T/R - Tape and Reel (Alt: CWDM305ND TR13) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2629 5000:$0.2509 10000:$0.2449 15000:$0.2339 25000:$0.2279
CWDM305ND TR13 DISTI # 610-CWDM305ND-TR13	Central Semiconductor Corp	MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode RoHS: Compliant	0	2500:$0.2710 10000:$0.2610 25000:$0.2500

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: CWDM305N TR13 OMO.#: OMO-CWDM305N-TR13	MOSFET N-Ch Enh Mode FET 30Vds 20Vgs 2.0W
	Mfr.#: CWDM305ND TR13 OMO.#: OMO-CWDM305ND-TR13	MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode
	Mfr.#: CWDM305PD TR13 OMO.#: OMO-CWDM305PD-TR13	MOSFET SMD Small Sig Mosfet Dual P-Ch Enh Mode
	Mfr.#: CWDM305N OMO.#: OMO-CWDM305N-1190	Жаңа және түпнұсқа
	Mfr.#: CWDM305N TR13 OMO.#: OMO-CWDM305N-TR13-CENTRAL-SEMICONDUCTOR	MOSFET N-CH 30V 5.8A 8SOIC
	Mfr.#: CWDM305ND OMO.#: OMO-CWDM305ND-1190	Жаңа және түпнұсқа
	Mfr.#: CWDM305P OMO.#: OMO-CWDM305P-1190	Жаңа және түпнұсқа
	Mfr.#: CWDM305PD OMO.#: OMO-CWDM305PD-1190	Жаңа және түпнұсқа
	Mfr.#: CWDM305ND TR13 OMO.#: OMO-CWDM305ND-TR13-CENTRAL-SEMICONDUCTOR	MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode
	Mfr.#: CWDM305P TR13 OMO.#: OMO-CWDM305P-TR13-CENTRAL-SEMICONDUCTOR	MOSFET SMD Small Sig Mosfet P-Channel Enh Mode

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 2000
Саны енгізіңіз:

CWDM305ND TR13 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

-ден бастаңыз

CWDM305N 4
CWDM305 8
CWDM3 12
CWDM 25
CWD 122

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CWDM305ND TR13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes