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SI2365EDS-T1-GE3

SI2365EDS-T1-GE3
Mfr. #:
SI2365EDS-T1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET -20V Vds 8V Vgs SOT-23
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SI2365EDS-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2365EDS-T1-GE3 DatasheetSI2365EDS-T1-GE3 Datasheet (P4-P6)SI2365EDS-T1-GE3 Datasheet (P7-P9)SI2365EDS-T1-GE3 Datasheet (P10)
ECAD Model:
Көбірек ақпарат:
SI2365EDS-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
SOT-23-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
P-арна
Vds - ағызу көзінің бұзылу кернеуі:
20 V
Идентификатор - үздіксіз төгу тогы:
5.9 A
Rds On - ағызу көзіне қарсылық:
26.5 mOhms
Vgs th - Gate-Source шекті кернеуі:
1 V
Vgs - Шлюз көзі кернеуі:
8 V
Qg - қақпа заряды:
36 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
1.7 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
TrenchFET
Қаптама:
Ролик
Биіктігі:
1.45 mm
Ұзындығы:
2.9 mm
Серия:
SI2
Транзистор түрі:
1 P-Channel
Ені:
1.6 mm
Бренд:
Вишай / Силиконикс
Күз уақыты:
14 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
21 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
62 ns
Қосудың әдеттегі кешігу уақыты:
22 ns
Бөлім # Бүркеншік аттар:
SI4816DY-T1-E3-S
Бірлік салмағы:
0.000282 oz
Tags
SI2365, SI236, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI2365EDS-T1-GE3 P-channel MOSFET Transistor; 4.7 A; 20 V; 3-Pin TO-236
***ical
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
***ponent Sense
TRANS TP0101K MOS-FET ENH P 20V 0.58A
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Бөлім № Mfg. Сипаттама Қор Бағасы
SI2365EDS-T1-GE3
DISTI # V36:1790_09216880		Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET
RoHS: Compliant		0
  • 3000000:$0.0774
  • 1500000:$0.0775
  • 300000:$0.0861
  • 30000:$0.1041
  • 3000:$0.1073
SI2365EDS-T1-GE3
DISTI # V72:2272_09216880		Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET
RoHS: Compliant		0
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3CT-ND    		Vishay SiliconixMOSFET P-CH 20V 5.9A TO-236
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		69696In Stock
    • 1000:$0.1023
    • 500:$0.1330
    • 100:$0.1944
    • 10:$0.3120
    • 1:$0.4100
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3DKR-ND    		Vishay SiliconixMOSFET P-CH 20V 5.9A TO-236
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		69696In Stock
    • 1000:$0.1023
    • 500:$0.1330
    • 100:$0.1944
    • 10:$0.3120
    • 1:$0.4100
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3TR-ND    		Vishay SiliconixMOSFET P-CH 20V 5.9A TO-236
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		69000In Stock
    • 150000:$0.0629
    • 75000:$0.0646
    • 30000:$0.0720
    • 15000:$0.0770
    • 6000:$0.0844
    • 3000:$0.0894
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 3-Pin TO-236 T/R (Alt: SI2365EDS-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 15000
    • 150000:$0.0770
    • 75000:$0.0783
    • 30000:$0.0797
    • 15000:$0.0825
    • 9000:$0.0856
    • 6000:$0.0888
    • 3000:$0.0924
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2365EDS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.0606
    • 18000:$0.0623
    • 12000:$0.0641
    • 6000:$0.0668
    • 3000:$0.0688
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 3-Pin TO-236 T/R (Alt: SI2365EDS-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.0659
    • 18000:€0.0709
    • 12000:€0.0769
    • 6000:€0.0889
    • 3000:€0.1309
    SI2365EDS-T1-GE3
    DISTI # 01AC4983    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.9A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0265ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power RoHS Compliant: Yes10364
    • 1000:$0.0940
    • 500:$0.1180
    • 250:$0.1310
    • 100:$0.1430
    • 50:$0.1740
    • 25:$0.2060
    • 10:$0.2370
    • 1:$0.4050
    SI2365EDS-T1-GE3
    DISTI # 05AC9484    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.9A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0265ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power RoHS Compliant: Yes36000
    • 1:$0.0940
    • 3000:$0.0940
    SI2365EDS-T1-GE3
    DISTI # 70AC6497    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.9A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0265ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,MSL:- RoHS Compliant: Yes0
    • 1000:$0.0990
    • 500:$0.1280
    • 250:$0.1430
    • 100:$0.1590
    • 50:$0.2150
    • 25:$0.2720
    • 1:$0.4750
    SI2365EDS-T1-GE3
    DISTI # 70459515    		Vishay SiliconixSI2365EDS-T1-GE3 P-channel MOSFET Transistor,4.7 A,20 V,3-Pin TO-236
    RoHS: Compliant    		0
    • 25:$0.1340
    • 250:$0.1250
    SI2365EDS-T1-GE3
    DISTI # 78-SI2365EDS-T1-GE3    		Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs SOT-23
    RoHS: Compliant    		0
    • 1:$0.4600
    • 10:$0.2680
    • 100:$0.1560
    • 500:$0.1260
    • 1000:$0.0970
    • 3000:$0.0850
    • 6000:$0.0800
    • 9000:$0.0730
    • 24000:$0.0680
    SI2365EDS-T1-GE3
    DISTI # 8123139P    		Vishay IntertechnologiesTRANS MOSFET P-CH 20V 4.5A 3-PIN, RL1650
    • 3000:£0.0680
    • 1500:£0.0780
    • 600:£0.1000
    • 300:£0.1090
    SI2365EDS-T1-GE3
    DISTI # 8123139    		Vishay IntertechnologiesTRANS MOSFET P-CH 20V 4.5A 3-PIN, PK4500
    • 3000:£0.0680
    • 1500:£0.0780
    • 600:£0.1000
    • 300:£0.1090
    • 50:£0.1810
    SI2365EDS-T1-GE3
    DISTI # 2646370    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-23
    RoHS: Compliant    		13836
    • 1000:$0.1550
    • 500:$0.2010
    • 100:$0.2930
    • 10:$0.4700
    • 1:$0.6200
    SI2365EDS-T1-GE3
    DISTI # 2679680    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-23
    RoHS: Compliant    		33000
    • 75000:$0.1000
    • 30000:$0.1090
    • 15000:$0.1160
    • 6000:$0.1280
    • 3000:$0.1350
    SI2365EDS-T1-GE3
    DISTI # 2679680    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-2333000
    • 9000:£0.0530
    • 3000:£0.0632
    SI2365EDS-T1-GE3
    DISTI # TMOSS6874    		Vishay IntertechnologiesP-CH20V 5,9A 32mOhm SOT23
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$0.0713
    SI2365EDS-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs SOT-23
    RoHS: Compliant    		Americas - 156000
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      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1500
      Саны енгізіңіз:
      SI2365EDS-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      0,46 $
      0,46 $
      10
      0,27 $
      2,68 $
      100
      0,16 $
      15,60 $
      500
      0,13 $
      63,00 $
      1000
      0,10 $
      97,00 $
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