CG2H40025 Gallium-Nitride High-Electron-Mobility T

By Wolfspeed 77

CG2H40025 Gallium-Nitride High-Electron-Mobility T

Cree Wolfspeed’s CG2H40025 is an unmatched Gallium-Nitride (GaN) high-electron-mobility transistor (HEMT) that offers a general-purpose broadband solution for a variety of RF and microwave applications. Operating on a 28 V rail, the CG2H40025 is ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down flange package and solder-down pill packages.

Features
  • Up to 6 GHz operation
  • 17 dB small signal gain at 2.0 GHz
  • 15 dB small signal gain at 4.0 GHz
  • 30 W typical PSAT
  • 70% efficiency at PSAT
  • 28 V operation
Applications
  • Two-way private radio
  • Broadband amplifiers
  • Cellular infrastructure
  • Test instrumentation
  • Class A, AB, linear amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms

Санаттар

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