MDmesh™ V Power MOSFETs

By STMicroelectronics 138

MDmesh™ V Power MOSFETs

STMicroelectronics' MDmesh™ V Power MOSFET portfolio offers a broad range of breakdown voltages from -500 V to 1500 V, with low gate charge and low on-resistance, combined with state-of-the-art packaging. STMicroelectronics' process technology for both high-voltage and low-voltage MOSFETs has enhanced power handling capability, resulting in high-efficiency solutions.

Features
  • -500 V to 1500 V breakdown voltage range
  • World's best RDS(on) area for 650 V power MOSFETs (0.029 Ω in the TO-247 package)
  • Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements
  • Intrinsic, fast body diode option for select product lines
In each voltage range, supporting applications such as point of load, telecom DC-DC converters, PFC switch mode power supplies, and automotive equipment, STMicroelectronics has the right MOSFET for your design.

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