Low RDS(ON) P-Channel MOSFET

By Toshiba Semiconductor and Storage 208

Low RDS(ON) P-Channel MOSFET

As the battery capacity of mobile products increases, there is also an increase in charging current. Toshiba's product uses the latest UMOS VI process to provide a product in a small 2.0 mm × 2.0 mm × 0.75 mm package (UDFN6B) that achieves low ON-resistance and allows large currents. It is ideal as a charging switch for mobile devices such as smartphones.


Жаңа өнімдер:

SSM6J505NU,LF

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